STS26N3LLH6 Transistor - N-MOSFET 30V 26A (SOP8)

he STS26N3LLH6 is a DeepGATE™ N-channel Power MOSFET utilizes the 6th generation of design rules of STripFET™ VI technology, with a new gate structure. The device exhibits lowest RDS (ON) in all packages.

Egenskaber:

• RDS (ON) x Qg industry benchmark
• Extremely low ON-resistance RDS (ON)
• Very low switching gate charge
• High avalanche ruggedness
• Low gate drive power losses
• -55 to 150°C Operating junction temperature range

Tekniske detaljer:

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 26A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0038ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs: 1V
• Power Dissipation Pd: 2.7W
• Hus: SOP8
• Operating Temperature Max: 150°C