This product consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing The phototransistor receives radiation from the IR only. This is the normal situation. But when an object is in between, phototransistor could not receive the radiation.
Features:
- Fast response time
- High analytic
- High sensitivity
Specifications:
- Orientation: Transmissive
- Peak wavelength: 940nm
- Mounting: Through Hole
- Type: 3mm Gap Distance
- Length: 24.4mm
- Width: 6mm
- Height: 10.4mm
- Min. Ic ON: 0.9mA
- Max. Forward Voltage: 1.5V
- Max. Saturation Voltage Vce: 0.4V
- Operating temperature: -25...85°C
- Storage temperature: -40...85°C
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